Title :
Control of group-III atoms distribution in thin quantum wells analyzed by X-ray CTR scattering measurement
Author :
Tabuchi, M. ; Yamada, H. ; Hisadome, S. ; Oga, R. ; Takeda, Y.
Author_Institution :
Venture Bus. Laboratory, Nagoya Univ., Japan
fDate :
31 May-4 June 2004
Abstract :
The InP/Ga0.47In0.53As(3ML)/InP quantum well structure samples were grown by organometallic vapor phase epitaxy at different growth temperatures to find the dependence of the composition profiles on the growth temperature. The samples were investigated by the X-ray crystal truncation rod scattering measurement. The distribution of Ga could be controlled by the change of the growth temperature, which had never be controlled by the change of the source-gas-flow sequence. In order to make the distributions of atoms as designed, the growth temperature should be selected at first to control the distribution of Ga, then the source-gas-flow sequence should be tuned to control the distribution of As.
Keywords :
III-V semiconductors; MOCVD; X-ray scattering; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InP-Ga0.47In0.53As-InP; X-ray CTR scattering; X-ray crystal truncation rod scattering measurement; group-III atoms distribution; growth temperatures; organometallic vapor phase epitaxy; source-gas-flow sequence; thin quantum wells; Atomic measurements; Epitaxial growth; Indium phosphide; Particle scattering; Rough surfaces; Surface roughness; Temperature control; Temperature dependence; Temperature distribution; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442727
