Control of group-III atoms distribution in thin quantum wells analyzed by X-ray CTR scattering measurement

Author

Tabuchi, M. ; Yamada, H. ; Hisadome, S. ; Oga, R. ; Takeda, Y.

Author_Institution

Venture Bus. Laboratory, Nagoya Univ., Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

350

Lastpage

353

Abstract

The InP/Ga_0.47In_0.53As(3ML)/InP quantum well structure samples were grown by organometallic vapor phase epitaxy at different growth temperatures to find the dependence of the composition profiles on the growth temperature. The samples were investigated by the X-ray crystal truncation rod scattering measurement. The distribution of Ga could be controlled by the change of the growth temperature, which had never be controlled by the change of the source-gas-flow sequence. In order to make the distributions of atoms as designed, the growth temperature should be selected at first to control the distribution of Ga, then the source-gas-flow sequence should be tuned to control the distribution of As.

Keywords

III-V semiconductors; MOCVD; X-ray scattering; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InP-Ga_0.47In_0.53As-InP; X-ray CTR scattering; X-ray crystal truncation rod scattering measurement; group-III atoms distribution; growth temperatures; organometallic vapor phase epitaxy; source-gas-flow sequence; thin quantum wells; Atomic measurements; Epitaxial growth; Indium phosphide; Particle scattering; Rough surfaces; Surface roughness; Temperature control; Temperature dependence; Temperature distribution; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442727

Filename

1442727