Title :
MBE-grown AlxIn1-xAs/GayIn1-y As/InP-electroabsorption modulators with enhanced Stark-effect
Author :
Schwander, T. ; Feifel, T. ; Panzlaff, K.
Author_Institution :
Bosch Telecom GmbH, Backnang, Germany
Abstract :
Electroabsorption modulators (EAMs) with AlxIn1-x As/GayIn1-yAs-Quantum-Wells (QWs) are promising for high-bit rate distribution-network transmitters, which require high bandwidth, high extinction-ratio and controlled chirp. The substitution of quaternary material by a Short-Period-Superlattice (SPSL) leads to an enhanced Stark-Shift, preferably in the 1.3 μm wavelength range. Optimum performance for 1.55 μm-EAMs is achieved, using tensile strained QWs with degenerated valence bands at the off-state. Samples are processed in a standard Ridge-Waveguide (RWG) technology and are characterized. All epitaxial layers are grown in a Solid Source MBE, using valved cracker cells for As and P
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; optical transmitters; optical waveguide components; optical waveguides; ridge waveguides; semiconductor heterojunctions; semiconductor quantum wells; semiconductor superlattices; 1.3 mum; 1.55 mum; AlxIn1-xAs/GayIn1-y As/InP; AlInAs; AlInAs-GaInAs-InP; GaInAs; InP; MBE-growth; controlled chirp; degenerated valence bands; electroabsorption modulators; enhanced Stark-effect; enhanced Stark-shift; epitaxial layers; high bandwidth; high extinction-ratio; high-bit rate distribution-network transmitters; off-state; optimum performance; quantum-wells; quaternary material; ridge-waveguide; short-period-superlattice; solid source MBE; tensile strained quantum wells; valved cracker cells; Absorption; Bandwidth; Chirp modulation; Epitaxial layers; Function approximation; Indium phosphide; Molecular beam epitaxial growth; Superlattices; Telecommunication control; Transmitters;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492021
