Achievements and Perspectives of the Drie Technology for the Microsystems Market

Author

Puech, M. ; Thevenoud, J.M. ; Gruffat, J.M. ; Launay, N. ; Godinat, P. ; Le Barillec, O.

Author_Institution

Alcatel Micro Machining Syst., Annecy

fYear

2007

fDate

10-14 June 2007

Firstpage

77

Lastpage

80

Abstract

This paper presents the evolution of the DRIE of silicon over the last decade. Starting with the initial MEMS product requirements, the DRIE demonstrated its potential to improve the delivered performances in line with the evolution of the Microsystems requirements. In less than a decade, the DRIE etching rate and aspect ratio have been multiplied by an impressive factor of 10. This outstanding capabilities favored its adoption in new microelectronic applications which lead to a step forward in the development of an extended range of tools and processes. As a result, the Microsystems will benefit from those latest developments.

Keywords

micromachining; micromechanical devices; sputter etching; DRIE technology; MEMS product requirements; deep reactive ion etching; etching rate; micromachining; microsystems market; Anisotropic magnetoresistance; Capacitors; Etching; Micromechanical devices; Plasma applications; Plasma chemistry; Plasma density; Plasma sources; Polymer films; Silicon; DRIE; ICP source; MEMS; Microsystems; etching rate; glass; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300075

Filename

4300075