Electrical isolation of MQW InGaAsP/InP structures by MeV iron ion implantation for vertical PIN modulators and photodiodes

Author

Kong, S.F. ; Pantouvaki, M. ; Liu, C.P. ; Seeds, A.J. ; Too, P. ; Ahmed, S. ; Gwilliam, R. ; Roberts, J.S.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

2004

fDate

31 May-4 June 2004

Firstpage

362

Lastpage

365

Abstract

Implantation-induced electrical isolation is a well known method in III-V semiconductor technology for the creation of local high resistivity regions in electronic and optoelectronic devices. In this paper, we demonstrate for the first time the fabrication of low leakage current (nA) planar vertical PIN modulators and detectors directly from epitaxial material using multiple energy Fe⁺ implant isolation in intentionally doped p- and n-type InP, and intrinsic multiple quantum well (MQW) InGaAsP layers.

Keywords

III-V semiconductors; annealing; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; ion implantation; iron; leakage currents; modulators; p-i-n photodiodes; semiconductor quantum wells; III-V semiconductor technology; InGaAsP-InP:Fe; MQW; MeV iron ion implantation; implantation-induced electrical isolation; leakage current; multiple quantum well; optoelectronic devices; photodiodes; vertical pin modulators; Conductivity; III-V semiconductor materials; Indium phosphide; Ion implantation; Iron; Isolation technology; Optical device fabrication; Optoelectronic devices; Photodiodes; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442730

Filename

1442730