Title :
Transition from ballistic to ohmic transport in T-Branch junctions at room temperature in GalnAs/AlInAs heterostructures
Author :
Galloo, J.S. ; Pichonat, E. ; Roelens, Y. ; Bollaert, S. ; Wallart, X. ; Cappy, A. ; Mateos, J. ; Gonzales, T.
Author_Institution :
IEMN-UMR CNRS, Villeneuve d´´Ascq, France
fDate :
31 May-4 June 2004
Abstract :
We have developed technology based on GalnAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-branch junctions (TBJs), Y-branch junctions (YBJs)). Then we present DC characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-branch junctions (YBJs).
Keywords :
aluminium compounds; ballistic transport; gallium arsenide; gallium compounds; indium compounds; semiconductor devices; semiconductor heterojunctions; 20 degC; GaInAs-AlInAs; T-branch junctions; Y-branch junctions; ballistic devices; ballistic-ohmic transport transition; heterostructures; Bit rate; Electron mobility; Frequency; Indium gallium arsenide; Indium phosphide; Resists; Scattering; Synthetic aperture sonar; Temperature; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442734
