DocumentCode :
3371438
Title :
A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier
Author :
Malmkvist, Mikael ; Mellberg, Anders ; Grahn, Jan ; Rorsman, Niklas ; Zirath, Herbert
Author_Institution :
Microwave Electron. Laboratory, Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
386
Lastpage :
388
Abstract :
We report a 50-nm InP pseudomorphic InAlAs/InGaAs/InP HEMT, demonstrated in a one-stage MMIC broadband amplifier exhibiting over 8-dB gain between 0 and 42 GHz. The extrinsic transit frequency (fT) and the maximum frequency of oscillation (fmax) of the 50 nm InP HEMT were 180 GHz and 260 GHz respectively. The two-finger, 100 μm gate-width HEMT showed an extrinsic DC peak transconductance of 910 mS/mm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; electric admittance; feedback amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; wideband amplifiers; 0 to 42 GHz; 100 mum; 180 GHz; 260 GHz; 50 nm; InAlAs-InGaAs-InP; MMIC broadband feedback amplifier; extrinsic transit frequency; oscillation frequency; pseudomorphic HEMT; transconductance; Broadband amplifiers; Feedback amplifiers; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; PHEMTs; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442736
Filename :
1442736
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3371438
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