Title :
Improved bipolar cascade laser characteristics by optimization of InP electron stopper layers
Author :
Dross, Frederic ; Van Dijk, Frederic ; Vinter, Borge
Author_Institution :
Thales Res. & Technol., Orsay, France
fDate :
31 May-4 June 2004
Abstract :
In order to design InP-based edge-emitting bipolar cascade lasers, we have developed a fully consistent transport model compatible with tunnel highly-doped junctions. We perform the simulation of single-mode laser structures and show the influence of doped InP layers surrounding the tunnel junctions on the characteristics of the devices. While increasing their width we analyze the reduction of current leakage but also the backward consequences on the optical characteristics. An asymmetric electron confining structure enables to obtain 230% external efficiency with a good optical confinement.
Keywords :
leakage currents; optimisation; quantum cascade lasers; semiconductor device models; 230 percent; InP; asymmetric electron confining structure; bipolar cascade laser; current leakage; edge-emitting bipolar cascade lasers; electron stopper layers; optical confinement; single-mode laser structures; tunnel highly-doped junctions; Carrier confinement; Current density; Electron optics; Indium phosphide; Laser modes; Optical losses; Optical refraction; Optical variables control; Quantum cascade lasers; Semiconductor process modeling;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442740
