Title :
On the origin of the semi-insulating behaviour of low-temperature In0.52Al0.48As grown by molecular beam epitaxy
Author :
Meva´a, C. ; Oustric, M. ; Viktorovitch, P. ; Letartre, X. ; Gendry, M. ; Hollinger, G. ; Bearzi, E. ; Benyattou, T. ; Guillot, G. ; Marty, O. ; Pitaval, M. ; Harmand, J.C. ; Quillec, M.
Author_Institution :
CNRS, Ecole Centrale de Lyon, Ecully, France
Abstract :
We have investigated the origin of the semi-insulating (SI) behaviour of low-temperature In0.52Al0.48As by correlating electrical and structural properties of epilayers grown by MBE on InP in the 300°C-565°C temperature range. Using a statistical model, we have analysed the dependence of the Fermi level energy on measurement temperature (77 K-400 K) for SI layers. The resistivity and the transport properties appear to be controlled by three electron traps whose origin is discussed on the basis of extended and structural point defects as observed by TEM
Keywords :
Fermi level; III-V semiconductors; aluminium compounds; electrical resistivity; electron traps; indium compounds; molecular beam epitaxial growth; point defects; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 300 to 565 degC; 77 to 400 K; Fermi level energy; In0.52Al0.48As; InP; TEM; electron traps; epitaxial layers; molecular beam epitaxy; point defects; resistivity; semi-insulating behaviour; semiconductors; statistical model; Admittance; Conductivity; Electric variables measurement; Indium phosphide; Molecular beam epitaxial growth; Position measurement; Schottky diodes; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492038
