DocumentCode
3371614
Title
1.3-1.55 μm light emission from InGaAs/GaAs quantum wells on GaAs using dipole δ-doping
Author
Wang, S.M. ; Zhao, Q.X. ; Wang, D. ; Wei, Y.-Q. ; Sadeghi, M. ; Larsson, A.
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
fYear
2004
fDate
31 May-4 June 2004
Firstpage
415
Lastpage
417
Abstract
We propose a new method for 1.3-1.55 μm lasers on GaAs using dipole δ-doping and demonstrate extension of photoluminescence wavelength from 1.07 to 1.55 μm in InGaAs/GaAs quantum wells at room temperature.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical materials; photoluminescence; quantum well lasers; semiconductor doping; 1.07 to 1.55 mum; InGaAs-GaAs; dipole δ-doping; lasers; light emission; photoluminescence; quantum wells; Doping; Gallium arsenide; Indium gallium arsenide; Laser theory; Photoluminescence; Physics; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442744
Filename
1442744
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