Title :
Gain-coupled distributed feedback lasers made by focused ion beam implantation: process parameters and device properties
Author :
Orth, A. ; Höfling, E. ; Zeh, R. ; Reithmaier, J.P. ; Forchel, A. ; Weber, J. ; Gyuro, I. ; Zielinski, E.
Author_Institution :
Wurzburg Univ., Germany
Abstract :
Gain-coupled GaInAsP/InP and GaInAs/GaAs distributed feedback lasers have been fabricated by maskless ion beam implantation with focused ion beams. The influence of implantation dose, operating temperature and resonator length on the laser properties has been investigated and compared with theory. Optically as well as electrically pumped lasers show nearly 100% longitudinal single mode yield and are well suited for photonic device integration in multiple wavelength multiplexing systems
Keywords :
III-V semiconductors; distributed feedback lasers; focused ion beam technology; gallium arsenide; indium compounds; integrated optoelectronics; ion beam applications; laser cavity resonators; laser modes; optical couplers; optical fabrication; optical transmitters; semiconductor lasers; wavelength division multiplexing; GaInAs-GaAs; GaInAs/GaAs distributed feedback lasers; GaInAsP-InP; GaInAsP/InP distributed feedback lasers; device properties; electrically pumped lasers; focused ion beam implantation; focused ion beams; gain-coupled distributed feedback lasers; implantation dose; laser properties; longitudinal single mode yield; maskless ion beam implantation; multiple wavelength multiplexing systems; operating temperature; photonic device integration; process parameters; resonator length; Distributed feedback devices; Gallium arsenide; Indium phosphide; Ion beams; Laser feedback; Laser modes; Laser theory; Optical resonators; Pump lasers; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492045
