Wavelength extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole δ-doping

Author

Wang, X.D. ; Wang, S.M. ; Wei, Y.-Q. ; Zhao, Q.X. ; Sadeghi, M. ; Larsson, A.

Author_Institution

Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenborg, Sweden

fYear

2004

fDate

31 May-4 June 2004

Firstpage

428

Lastpage

430

Abstract

We demonstrate the wavelength extension of InGaAs/GaAs quantum well (QW) laser diodes (LD) by dipole δ-doping (DDD). This is achieved by introducing n- and p-type δ-doping close to each side of the QW, respectively. As a result, the internal electric field causes band bending which reduces the interband transition energy. Using this method, the lasing wavelength of an In_0.36Ga_0.64As/GaAs QW LD is shifted from 1.175 μm to 1.206 μm. Although electroluminescence shows that the lasing comes from electron and hole recombination in the excited states, we believe that this may provide a new method for long-wavelength InGaAs/GaAs QW laser fabrication.

Keywords

III-V semiconductors; electroluminescence; electron-hole recombination; excited states; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor doping; spectral line shift; 1.175 mum; 1.206 mum; In_0.36Ga_0.64As-GaAs; band bending; dipole δ-doping; electroluminescence; electron-hole recombination; excited states; interband transition energy; quantum well laser diodes; wavelength extension; Chemical lasers; Diode lasers; Doping; Gallium arsenide; Indium gallium arsenide; Optical device fabrication; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442748

Filename

1442748