Static characteristics of an InAlGaAs quantum well monolithically integrated DBR laser and electroabsorption modulator fabricated by quantum well intermixing

Author

Robert, Franck ; Brycc, A.C. ; Marsh, John H. ; SpringThorpe, Anthony J. ; White, J. Kenton

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2004

fDate

31 May-4 June 2004

Firstpage

431

Lastpage

434

Abstract

We report on the operation of a monolithically integrated DBR laser electroabsorption modulator fabricated in 1.3 μm InAlGaAs strained multiple quantum well structure. The device encompasses three sections of different bandgaps obtained by a two step annealing-sputtering quantum well intermixing process.

Keywords

III-V semiconductors; aluminium compounds; annealing; distributed Bragg reflector lasers; electro-optical modulation; energy gap; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical fabrication; quantum well lasers; sputter deposition; 1.3 mum; InAlGaAs; bandgaps; electroabsorption modulator; quantum well monolithically integrated DBR laser; two step annealing-sputtering quantum well intermixing process; Absorption; Distributed Bragg reflectors; Distributed feedback devices; Fiber lasers; Laser modes; Optical device fabrication; Photonic band gap; Quantum well lasers; Semiconductor lasers; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442749

Filename

1442749