Study on voltage oscillation phenomenon in high power P-i-N diode

The voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied for the first time. The anomalous spike voltage starts to appear when the reverse bias V_RB just becomes larger than the threshold reverse power supply voltage V_RB(th). As the initial forward current density I_F decreases below 20 A/cm², V_RB(th) becomes lower than the punch-through voltage V_PT , since the excess carrier disappears before the depletion layer reaches the N⁺ cathode region during the reverse recovery process. Furthermore, measurements were also done to corroborate numerical results. Based upon these results, a newly developed diode was successfully designed and fabricated in order to reduce voltage oscillations