DocumentCode :
3371796
Title :
A design of transition between microstrip line and semiconductor devices with gold-bonding wire
Author :
Ma, Tianye ; Jiang, Yuan ; Fan, Yong ; Lin, Xianqi ; Zhu, Zhongbo
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2011
fDate :
1-3 Nov. 2011
Firstpage :
303
Lastpage :
305
Abstract :
Gold-bonding wires have been frequently used in connecting semiconductor devices and microstrip lines. This paper presents a design of transition between microstrip line and semiconductor device with gold-bonding wire. As the material and shape of the loop has already been discussed in other researches, this paper concentrates on the positions of the solders and the height of the chip. The results of the simulations indicate that if the solders locate beside the edge of the microstrip line, and the height of chip is appropriate designed, less insertion loss can be expected.
Keywords :
design; microstrip lines; semiconductor devices; design; gold-bonding wire; microstrip line; semiconductor devices; Bonding; Current density; Gold; Insertion loss; Microstrip; Substrates; Wires; gold-bonding wire; insertion loss; microstrip line;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8265-8
Type :
conf
DOI :
10.1109/MAPE.2011.6156217
Filename :
6156217
Link To Document :
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