Pd/Zn/Pd ohmic contact to p-InP

Author

Park, Moon-Ho ; Wang, L.C. ; Cheng, J.Y. ; Deng, F. ; Lau, S.S. ; Palmstrøm, C.J.

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

350

Lastpage

353

Abstract

A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10^-5 Ω-cm²) has been obtained for contacts with an atomic ratio of Zn to Pd of ~1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn₃P₂/InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn₃P₂/InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (>600 Å) sample started to show abnormal data distribution for annealing temperatures higher than 480°C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing

Keywords

II-VI semiconductors; annealing; contact resistance; diffusion; indium compounds; ohmic contacts; palladium; semiconductor heterojunctions; semiconductor-metal boundaries; zinc; zinc compounds; InP; Pd-Zn-Pd; Pd/Zn/Pd ohmic contact; Zn₃P₂/InP heterojunction; annealing temperatures; contact/semiconductor interface; data distribution; lateral Zn diffusion; low resistance ohmic contact; off-mesa area; p-InP; solid phase regrowth principle; Annealing; Atomic layer deposition; Conductivity; Contact resistance; Heterojunctions; Indium phosphide; Ohmic contacts; Solids; Substrates; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492051

Filename

492051