• DocumentCode
    3371848
  • Title

    Feasibility of realizing quantum dots sensitive to TM mode lights with wavelength of 1.5 μm

  • Author

    Ebe, E. ; Nakata, Y. ; Sugawara, M. ; Arakawa, Y.

  • Author_Institution
    Inst. of Industrial Sci., Tokyo Univ., Japan
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    443
  • Lastpage
    446
  • Abstract
    We calculate band lineups and show that we can obtain 1.5 μm and TM sensitive InxGa1-xAs QDs by controlling strains both in plane and growth directions. InAs QD should relax in plane directions. GaAs QD should expand in growth directions.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical materials; semiconductor growth; semiconductor quantum dots; 1.5 mum; InxGa1-xAs; TM mode lights; band lineups; quantum dots; semiconductor growth; strain control; Capacitive sensors; Gallium arsenide; Indium phosphide; Intrusion detection; Lattices; Quantum dots; Semiconductor optical amplifiers; Strain control; Tellurium; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442752
  • Filename
    1442752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3371848