Title :
Possibilities of HfO2 for Double-Pole Four-Throw Double-Gate RF CMOS switch
Author :
Srivastava, Viranjay M. ; Singh, G. ; Yadav, K.S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Jaypee Univ. of Inf. Technol., Solan, India
Abstract :
In this paper, we have designed a Double-Pole Four-Throw (DP4T) RF CMOS switch, using Double-Gate (DG) MOSFET which has a high dielectric Hafnium-dioxide (HfO2) in place of Silicon-dioxide (SiO2). The performance of HfO2 for the switch such as an effective ON-resistance, attenuation, flat-band capacitance, average dynamic power, doping densities, Debye length, and mobility of carriers, barrier heights and working efficiency at high temperature has been discussed. The results for the analysis of this DP4T DG RF CMOS switch with HfO2 includes the basics of the circuit elements required as integrated circuits for the radio frequency communication systems.
Keywords :
CMOS integrated circuits; carrier mobility; hafnium compounds; integrated circuit design; semiconductor switches; DP4T DG RF CMOS switch; Debye length; HfO2; average dynamic power; barrier heights; carrier mobility; circuit elements; doping densities; double-gate MOSFET; double-pole four-throw double-gate RF CMOS switch; effective ON-resistance; flat-band capacitance; high dielectric hafnium-dioxide; integrated circuits; radio frequency communication systems; working efficiency; CMOS integrated circuits; Hafnium compounds; Logic gates; MOSFET circuits; Radio frequency; Switches; Switching circuits; CMOS Switch; DP4T Switch; Double-Gate MOSFET; Hafnium-dioxide; High Dielectric; RF Switch; Radio Frequency; VLSI;
Conference_Titel :
Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8265-8
DOI :
10.1109/MAPE.2011.6156224
