• DocumentCode
    3371974
  • Title

    Investigation of charging damage induced V/sub t/ mismatch for submicron mixed-signal technology

  • Author

    Zhao, J. ; Chen, H.S. ; Teng, C.S.

  • Author_Institution
    Fairchild Res. Center, Nat. Semicond. Corp., Santa Clara, CA, USA
  • fYear
    1996
  • fDate
    April 30 1996-May 2 1996
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    In analog and mixed-signal circuit applications, control of transistor analog parameters such as threshold voltage (V/sub t/) mismatch of differential pairs becomes crucial to achieve precise circuit performance. In this paper, it is illustrated that small poly and metal "antennae" can result in severe V/sub t/ mismatch during the processes such as high dose implantation, metal etch and ashing. To realize excellent analog and/or mixed-signal performance, both process optimization and circuit protection solutions are important in minimizing the adverse effect of V/sub t/ mismatch.
  • Keywords
    CMOS integrated circuits; etching; integrated circuit technology; ion implantation; mixed analogue-digital integrated circuits; protection; surface charging; ashing; charging damage induced V/sub t/ mismatch; circuit protection; differential pairs; high dose implantation; metal etch; process optimization; submicro analog circuit applications; submicron mixed-signal technology; threshold voltage mismatch; transistor analog parameters; CMOS technology; Circuits; Degradation; Etching; Plasma applications; Plasma devices; Plasma sources; Postal services; Protection; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
  • Conference_Location
    Dallas, TX, USA
  • Print_ISBN
    0-7803-2753-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.1996.492058
  • Filename
    492058