Title :
Investigation of charging damage induced V/sub t/ mismatch for submicron mixed-signal technology
Author :
Zhao, J. ; Chen, H.S. ; Teng, C.S.
Author_Institution :
Fairchild Res. Center, Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
April 30 1996-May 2 1996
Abstract :
In analog and mixed-signal circuit applications, control of transistor analog parameters such as threshold voltage (V/sub t/) mismatch of differential pairs becomes crucial to achieve precise circuit performance. In this paper, it is illustrated that small poly and metal "antennae" can result in severe V/sub t/ mismatch during the processes such as high dose implantation, metal etch and ashing. To realize excellent analog and/or mixed-signal performance, both process optimization and circuit protection solutions are important in minimizing the adverse effect of V/sub t/ mismatch.
Keywords :
CMOS integrated circuits; etching; integrated circuit technology; ion implantation; mixed analogue-digital integrated circuits; protection; surface charging; ashing; charging damage induced V/sub t/ mismatch; circuit protection; differential pairs; high dose implantation; metal etch; process optimization; submicro analog circuit applications; submicron mixed-signal technology; threshold voltage mismatch; transistor analog parameters; CMOS technology; Circuits; Degradation; Etching; Plasma applications; Plasma devices; Plasma sources; Postal services; Protection; Transistors;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492058