Title :
Highly reliable furnace-grown N/sub 2/O tunnel oxide for a microcontroller with embedded flash EEPROM
Author :
Maiti, Bikas ; Shum, Danny ; Paulson, Wayne M. ; Chang, Ko-Min ; Tobin, Philip J. ; Weidner, Mark ; Kuo, Clinton
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fDate :
April 30 1996-May 2 1996
Abstract :
The superior characteristics of furnace-grown N/sub 2/O-nitrided tunnel dielectric for a microcontroller with embedded flash are reported in this paper. These devices demonstrated excellent write and erase (W/E) endurance with small window closure in comparison to thermal oxide. After extended endurance stress, improved read disturb lifetime and good drain disturb characteristics were obtained with N/sub 2/O tunnel oxynitride.
Keywords :
CMOS memory circuits; EPROM; integrated circuit reliability; integrated circuit technology; microcontrollers; nitridation; oxidation; tunnelling; drain disturb characteristics; embedded flash EEPROM; furnace-grown N/sub 2/O-nitrided tunnel oxide; microcontroller; oxynitride dielectric; read disturb lifetime; reliability; window closure; write/erase endurance; Dielectrics; EPROM; Hot carriers; Laboratories; Microcontrollers; Research and development; Secondary generated hot electron injection; Split gate flash memory cells; Thermal stresses; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492061
