Title :
Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory
Author :
Klimach, H. ; Arnaud, A. ; Schneider, M.C. ; Galup-Montoro, C.
Author_Institution :
Univ. Fed. de Santa Catarina, Brazil
Abstract :
This work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 μm CMOS technology corroborate the theoretical development of this work.
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit design; integrated circuit reliability; semiconductor device models; 1.2 micron; CMOS technology; MOS transistor matching calculation; analog design; carrier number fluctuation theory; consistent model; drain current mismatch; physics-based MOSFET model; process parameters; CMOS technology; Circuit testing; Digital circuits; Fluctuations; Low-frequency noise; MOSFETs; Region 1; Semiconductor device modeling; Transistors; Voltage;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1329471
