DocumentCode :
3372093
Title :
Hybrid CMOS/memristor circuits
Author :
Strukov, D.B. ; Stewart, D.R. ; Borghetti, J. ; Li, X. ; Pickett, M. ; Ribeiro, G. Medeiros ; Robinett, W. ; Snider, G. ; Strachan, J.P. ; Wu, W. ; Xia, Q. ; Yang, J. Joshua ; Williams, R.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., UC Santa Barbara, Santa Barbara, CA, USA
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
1967
Lastpage :
1970
Abstract :
This is a brief review of recent work on the prospective hybrid CMOS/memristor circuits. Such hybrids combine the flexibility, reliability and high functionality of the CMOS subsystem with very high density of nanoscale thin film resistance switching devices operating on different physical principles. Simulation and initial experimental results demonstrate that performance of CMOS/memristor circuits for several important applications is well beyond scaling limits of conventional VLSI paradigm.
Keywords :
CMOS integrated circuits; hybrid integrated circuits; memristors; hybrid CMOS/memristor circuits; Circuits; Memristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537020
Filename :
5537020
Link To Document :
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