Title :
Non-uniform current flow through thin oxide after Fowler-Nordheim current stress
Author :
Yamada, Seiji ; Amemiya, Kazumi ; Yamane, Tomoko ; Hazama, Hiroaki ; Hashimoto, Kazuhiko
Author_Institution :
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
fDate :
April 30 1996-May 2 1996
Abstract :
Non-uniform current flow after Fowler-Nordheim current stress has been discussed. In a large thin oxide area, there are certain fixed spot areas which can trap electrons easily, and Fowler-Nordheim tunnel current is reduced at the spot areas. Enlargement of the stress induced leakage current due to trapped holes could happen at all spot areas with the same probability, but the spot areas are replaced easily by additional Fowler-Nordheim current stress. Each phenomenon occurs with very low probability. Using a 2M bit NOR flash EEPROM test array, non-uniform current flow occurring in a large area has been clarified by tracking all cell behavior individually.
Keywords :
EPROM; MOS memory circuits; electron traps; hole traps; integrated circuit reliability; integrated circuit testing; leakage currents; 2 Mbit; Fowler-Nordheim current stress; NOR flash EEPROM test array; cell behavior; electron traps; fixed spot areas; hole traps; nonuniform current flow; probability; stress induced leakage current; thin oxide area; EPROM; Electron traps; Flash memory; Leakage current; MOSFET circuits; Semiconductor devices; Stress; Testing; Threshold voltage; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492068
