Title :
A comparative study of GaTlAs, InTlAs and GaInTlAs grown by SSMBE: the detrimental effect of indium
Author :
Beneyton, R. ; Regreny, P. ; Gendry, I.M. ; Grenet, I.C. ; Hollinger, G. ; Canut, I.E.
Author_Institution :
Ecole Centrale de Lyon, Ecully, France
fDate :
31 May-4 June 2004
Abstract :
Epilayers of (Ga1-yIny)1-xTlxAs on InP(001), Ga1-xTlxAs on GaAs(001) and In1-xTlxAs on InAs(001) have been successfully grown using low-temperature solid-source molecular beam epitaxy (LT-SS-MBE). The epilayers have been fully characterised using reflection high energy electron diffraction (RHEED), Nomarsky optical microscopy (NOM), atomic force microscopy (AFM), double-crystal X-ray diffraction (DC-XRD) and Rutherford backscattering spectrometry (RBS). The study brings new information on the origin of the low incorporation rate of Tl atoms into III-V compounds and more precisely on the detrimental role of indium in this incorporation. In particular, it explains why only a maximum of 4% Tl is incorporated in a Ga0.47In0.53As matrix. This amount for a Ga0.47In0.53As matrix corresponds to the weighted mean of those for GaAs and InAs matrices, viz, ∼7% and ∼2.4%, respectively.
Keywords :
III-V semiconductors; Rutherford backscattering; X-ray diffraction; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical microscopy; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; thallium compounds; (Ga1-yIny)1-xTlxAs; AFM; Ga1-xTlxAs; GaAs; III-V compounds; In1-xTlxAs; InAs; Nomarsky optical microscopy; RHEED; Rutherford backscattering spectrometry; SSMBE; XRD; atomic force microscopy; double-crystal X-ray diffraction; indium; low-temperature solid-source molecular beam epitaxy; reflection high energy electron diffraction; Atom optics; Atomic force microscopy; Atomic layer deposition; Electron microscopy; Indium; Molecular beam epitaxial growth; Optical diffraction; Optical microscopy; Optical reflection; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442766
