Title :
Excess currents induced by hot-hole injection and F-N stress in thin SiO/sub 2/ films [flash memories]
Author :
Teramoto, Akinobu ; Kobayashi, Kiyoteru ; Matsui, Yasuji ; Hirayama, Makoto ; Yasuoka, Akihiko
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan
fDate :
April 30 1996-May 2 1996
Abstract :
The behavior of excess currents induced by hot-hole injection and F-N stress is investigated in 60-/spl Aring/ oxides. The excess currents induced by the hot-hole injection and F-N stress are due to the filling of trap centers with electrons in addition to a leakage current through the oxides, and they decrease by annealing at 250/spl deg/C. The excess current induced by F-N stress is caused by the injected holes produced by high-energy-electrons. Dielectric breakdown caused by hot-hole injection has also been studied, and it is revealed that the total positive charge to breakdown (Q/sub p/) is independent of the oxide field. This supports previous measurement that the Q/sub p/ value is constant during F-N stress. The annealing-recovery mechanism in the dielectric breakdown is different from that in the excess current, though both are caused by the hot-hole injection.
Keywords :
EPROM; MOS memory circuits; annealing; electric breakdown; electron traps; hot carriers; insulating thin films; integrated circuit reliability; integrated circuit testing; leakage currents; silicon compounds; 250 degC; 60 angstrom; F-N stress; annealing; dielectric breakdown; excess currents; flash memories; high-energy-electrons; hot-hole injection; leakage current; recovery mechanism; total positive charge to breakdown; trap center filling; Charge carrier processes; Current density; Dielectric breakdown; Electrodes; Hot carriers; MOSFETs; Silicon; Stress; Substrate hot electron injection; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492069
