Excess currents induced by hot-hole injection and F-N stress in thin SiO/sub 2/ films [flash memories]

The behavior of excess currents induced by hot-hole injection and F-N stress is investigated in 60-/spl Aring/ oxides. The excess currents induced by the hot-hole injection and F-N stress are due to the filling of trap centers with electrons in addition to a leakage current through the oxides, and they decrease by annealing at 250/spl deg/C. The excess current induced by F-N stress is caused by the injected holes produced by high-energy-electrons. Dielectric breakdown caused by hot-hole injection has also been studied, and it is revealed that the total positive charge to breakdown (Q/sub p/) is independent of the oxide field. This supports previous measurement that the Q/sub p/ value is constant during F-N stress. The annealing-recovery mechanism in the dielectric breakdown is different from that in the excess current, though both are caused by the hot-hole injection.