Title :
Molecular beam epitaxy of quaternary semiconductor alloy GaNAsBi
Author :
Yoshimoto, Masahiko ; Huang, Wei ; Takehara, Y. ; Oe, Katsutoshi ; Chayahara, A. ; Horino, Y.
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fDate :
31 May-4 June 2004
Abstract :
New semiconductor GaNyAs1-x-yBix alloy with the GaBi molar fraction (x) up to 4.0% and the GaN molar fraction (y) up to 8.0% has been grown by molecular beam epitaxy. Incorporation of Bi and N atoms into epilayers was confirmed by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. To achieve Bi incorporation, As flux was adjusted in a limited range on the brink of As shortage on the growing surface at a low substrate temperature. The lattice constant determined by X-ray diffraction increased with the Bi supply, and it decreased with increasing N supply. The alloy is suitable to realize both a temperature-insensitive bandgap in the waveband of optical fiber communication and the lattice constant matched to that of GaAs.
Keywords :
III-V semiconductors; Rutherford backscattering; X-ray diffraction; gallium arsenide; gallium compounds; lattice constants; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; GaNAsBi; Rutherford backscattering spectroscopy; X-ray diffraction; bandgap; lattice constant; molecular beam epitaxy; optical fiber communication; quaternary semiconductor alloy; secondary ion mass spectroscopy; Atomic layer deposition; Atomic measurements; Backscatter; Bismuth; Gallium nitride; Lattices; Mass spectroscopy; Molecular beam epitaxial growth; Optical surface waves; Semiconductor materials;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442767
