Title :
Structure design and optimization of high-g piezoresistive accelerometer
Author :
Lishuang Liu ; Hanchang Zhou ; Wei Li ; Hualing Guo
Author_Institution :
Nat. Key Lab. of Electron. Meas. Technol., North Univ. of China, Taiyuan, China
Abstract :
On the basis of the acceleration measurement of high impact, a high-g acceleration sensors of the piezoresistive beam - island structure at four-terminal all fixed supported was designed. The experimental results show that the structure existed the impact failure. To solve this problem, the structure processed the optimization design from improving inherent frequency of device and enhancing resistance overload ability of device. The structure parameters of the ultra-high overload acceleration sensor were made the corresponding adjustment. Through the comparison, it can be seen that the optimized structure can be more effectively prevent structure resonance. In full range load, the maximum stress of the structure can protect better the structure. Resistance overload ability also improved, the sensor can can guarantee normal work under 200, 000 g overload.
Keywords :
acceleration measurement; accelerometers; beams (structures); computerised instrumentation; design engineering; impact (mechanical); island structure; microsensors; optimisation; piezoresistive devices; sensors; acceleration measurement; high-g acceleration sensor; high-g piezoresistive accelerometer optimization; impact failure; piezoresistive beam-island structure design; resistance overload ability; structure parameters; structure resonance prevention; ultra-high overload acceleration sensor; Acceleration; Piezoresistance; Sensors; Silicon; Stress; Structural beams; Structure optimization; high-g acceleration sensors; piezoresistive;
Conference_Titel :
Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on
Conference_Location :
Harbin, Heilongjiang
Print_ISBN :
978-1-61284-087-1
DOI :
10.1109/EMEIT.2011.6024031