DocumentCode :
3372247
Title :
Stress relaxation and microstructural change in passivated Al(Cu) lines
Author :
Yeo, In-Seok ; Ho, Paul S.
Author_Institution :
Center for Mater. Sci. & Eng., Texas Univ., Austin, TX, USA
fYear :
1996
fDate :
April 30 1996-May 2 1996
Firstpage :
131
Lastpage :
138
Abstract :
Relaxation of stresses in passivated Al lines can lead to void formation. Stress relaxation behavior of passivated Al(1 wt.% Cu) lines with 3, 1, and 0.5 /spl mu/m linewidths has been studied by using a bending beam technique. Our data show that there are two distinct stress relaxation regimes: one due to dislocation glide which occurs during a short period of annealing, and the other due to stress-induced voiding during a long-term annealing. The short-term stress relaxation in Al(Cu) lines depends on both line geometry and temperature, which can be explained as a combined result of the driving force (effective shear stress) and mass transport kinetics (temperature). The long-term stress relaxation behavior can be correlated with stress-induced voiding.
Keywords :
ageing; aluminium alloys; annealing; copper alloys; integrated circuit metallisation; integrated circuit reliability; slip; stress relaxation; thermal stresses; voids (solid); 0.5 to 3 micron; AlCu; IC interconnects; IC reliability; annealing; bending beam technique; dislocation glide; driving force; effective shear stress; line geometry; linewidths; mass transport kinetics; microstructural change; passivated lines; stress relaxation; void formation; Annealing; Artificial intelligence; Cooling; Force measurement; Kinetic theory; Scanning electron microscopy; Stress measurement; Temperature dependence; Tensile stress; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
Type :
conf
DOI :
10.1109/RELPHY.1996.492073
Filename :
492073
Link To Document :
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