Micromachined Bulk Wave Acoustic Bandgap Devices

Author

Olsson, Roy H., III ; Fleming, James G. ; El-Kady, Ihab F. ; Tuck, Melanie R. ; McCormick, Frederick B.

Author_Institution

Sandia Nat. Lab., Albuquerque

fYear

2007

fDate

10-14 June 2007

Firstpage

317

Lastpage

321

Abstract

A MEMS bulk wave acoustic bandgap has been designed and experimentally verified. The acoustic bandgaps are realized by including tungsten (W) scatterers in a SiO₂ matrix. Wide frequency ranges where acoustic waves are forbidden to exist are formed due to the large density and acoustic impedance mismatch between W and SiO₂. The acoustic bandgap structures are fabricated in a 7-mask process that features integrated aluminum nitride piezoelectric couplers. Acoustic bandgaps in a square lattice have been measured at 33 and 67 MHz with up to 35 dB of acoustic rejection and bandwidths exceeding 35% of the midgap.

Keywords

bulk acoustic wave devices; micromechanical devices; piezoelectric devices; 7-mask process; MEMS bulk wave acoustic bandgap device; aluminum nitride piezoelectric coupler; fabrication technology; Acoustic devices; Acoustic scattering; Acoustic waves; Aluminum nitride; Couplers; Frequency; Impedance; Micromechanical devices; Photonic band gap; Tungsten; acoustic bandgap; acoustic crystal; aluminum nitride; phononic bandgap; phononic crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300132

Filename

4300132