Title :
Energy capability of lateral and vertical DMOS transistors in an advanced automotive smart power technology
Author :
Merchant, S. ; Baird, R. ; Bennett, P. ; Percy, P. ; Dupuy, P. ; Rossel, P.
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Abstract :
Thermal failure of 65 V-rated SMARTMOS power devices is analyzed. Failure time measurements in the 1 ms range correlate with a 3D analytical model. The failure mechanism is shown to be purely thermal, not electrical. The RESURF (reduced surface voltage) LDMOS and updrain TMOS devices have equal energy capability per unit area. The low specific on-resistance of the LDMOS (1.6 mΩ-cm2) gives it a significant advantage over the updrain TMOS (2.3 mΩ-cm2 ) for many automotive applications
Keywords :
BIMOS integrated circuits; MOSFET; automotive electronics; electric resistance; failure analysis; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; power integrated circuits; thermal analysis; 3D analytical model; 65 V; BCDMOS IC; RESURF LDMOS devices; SMARTMOS power devices; TMOS devices; automotive applications; automotive smart power technology; energy capability; failure mechanism; failure time measurements; lateral DMOS transistors; reduced surface voltage LDMOS devices; specific on-resistance; thermal failure; vertical DMOS transistors; Automotive applications; Automotive engineering; Fuels; Integrated circuit modeling; Pulse shaping methods; Temperature; Thermal conductivity; Time measurement; Transistors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702697
