Title :
Minimization effect of reverse recovery using IGBT
Author_Institution :
Dept. of Electr. Eng., Univ. Teknol. PETRONAS, Tronoh, Malaysia
Abstract :
This work looks at on how reverse recovery affects the DC-DC converter system with respect to switching frequency and gate resistance of the inductive chopper circuit. Single Cuk converter with IGBT power switch (IRGBC40F) and power diode (UT268) is used as the test circuit. It is found that by increasing the switching frequency, higher reverse recovery power dissipation is observed having lower reverse recovery peak current. On the other hand, these two parameters are inversely proportional to the increase in gate resistance. Efficiency and output voltages ripples are then concluded.
Keywords :
DC-DC power convertors; choppers (circuits); power semiconductor diodes; power semiconductor switches; DC-DC converter system; IRGBC40F IGBT power switch; UT268 power diode; gate resistance; inductive chopper circuit; reverse recovery minimization effect; reverse recovery peak current; reverse recovery power dissipation; single cuk converter; switching frequency; test circuit; voltage ripples; Insulated gate bipolar transistors; Logic gates; Resistance; Schottky diodes; Switches; Switching frequency; Switching loss; Cuk converter; Insulated Gate Bipolar Transistor (IGBT); PSpice Simulation; Reverse recovery;
Conference_Titel :
Intelligent and Advanced Systems (ICIAS), 2012 4th International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4577-1968-4
DOI :
10.1109/ICIAS.2012.6306242
