DocumentCode :
3372377
Title :
Lock-in IR-OBIRCH assisted with current detection probe head extend its application to high voltage high current failure analysis
Author :
Wu, Chunlei ; Tian, Li ; Wu, Miao ; Fan, Diwei
Author_Institution :
Freescale Semicond. (China) Ltd., Tianjin, China
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
1
Lastpage :
4
Abstract :
Lock-in IR-OBIRCH analysis is very effective for defect localization in failure analysis. However, there are some cases that only have failures under high voltage and high current condition, which limits the application of Lock-in IR-OBIRCH as it only supply maximal 25V voltage and 100mA current. Current Detection Probe Head extend its capability that can supply maximal 250V voltage and 6.3A current, which supply a good solution about defect localization for high voltage and high current failure mode.
Keywords :
failure analysis; infrared imaging; integrated circuit reliability; integrated circuit testing; current detection probe head; high voltage high current failure analysis; infrared optical beam induced resistance change; lock-in IR-OBIRCH analysis; Capacitors; Earth Observing System; Head; Laser transitions; Leakage current; Probes; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4673-0980-6
Type :
conf
DOI :
10.1109/IPFA.2012.6306245
Filename :
6306245
Link To Document :
بازگشت