DocumentCode :
3372386
Title :
Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells
Author :
Hsu, T.M. ; Lai, C.Y. ; Chang, W.H. ; Pan, C.-C. ; Chuo, C.C. ; Chyi, J.-I.
Author_Institution :
Dept. of Phys., Nat. Central Univ., Chung-li, Taiwan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
545
Lastpage :
547
Abstract :
The polarization field of barrier-doped In0.06Ga0.94N/Al0.1In0.02Ga0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.
Keywords :
III-V semiconductors; Poisson equation; aluminium compounds; electroreflectance; gallium compounds; indium compounds; light polarisation; p-i-n diodes; semiconductor quantum wells; wide band gap semiconductors; In0.06Ga0.94N-Al0.1In0.02Ga0.88N; Poisson equation; barrier-doped multiple quantum wells; electroreflectance; p-i-n diode structures; polarization field; self-consistence calculations; Capacitive sensors; Doping; Erbium; Gallium nitride; Optical buffering; Optical materials; Optical polarization; P-i-n diodes; Piezoelectric polarization; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442777
Filename :
1442777
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3372386
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