Extraction of the average collector velocity in high-speed NpN InP/GaAsSb/InP DHBTs

Author

Liu, H.G. ; Tao, Nongjian ; Watkins, S.P. ; Bolognesi, C.R.

Author_Institution

Compound Semicond. Device Lab., Simon Fraser Univ., Burnaby, BC, Canada

fYear

2004

fDate

31 May-4 June 2004

Firstpage

556

Lastpage

557

Abstract

In "type-II" NpN InP/GaAsSb/InP double heterostructure bipolar transistors (DHBTs), the p⁺ GaAsSb base conduction band edge lies ΔE_C above the InP collector conduction band: a small ballistic energy ΔE_C is imparted to collected electrons as they are launched into the collector. The high initial velocity should in principle reduce the collector signal delay time. In the present work, we extract the average collector electron velocity in high-speed InP/GaAsSb/InP DHBTs, and find a peak average velocity approaching 4 × 10⁷ cm/s across a 2000 Å InP collector. This finding provides the first evidence of the performance advantage afforded by abrupt type-II B/C junctions for collector transport when compared to the conventional graded \´launchers\´ required when a GaInAs base layer is used.

Keywords

III-V semiconductors; arsenic compounds; conduction bands; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 2000 angstrom; DHBT; InP-GaAsSb-InP; collector electron velocity; conduction band edge; double heterostructure bipolar transistors; Data mining; Delay effects; Double heterojunction bipolar transistors; Electrons; Indium phosphide; Laboratories; Physics; Power engineering and energy; Semiconductor devices; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442781

Filename

1442781