High fT 0.05μm In0.52AlAs/In0.53GaAs HEMT´s with strained 5 nm InAs sub-channel on InP substrate

An In_0.52AlAs/In_0.53GaAs HEMT with 5 nm InAs-inserted-channel into the In_0.53GaAs channel was fabricated using 0.05 μm conventional T-shaped gate technology. The measured maximum transconductance (G_m,max) is above 1 S/mm even at a lower drain voltage of 0.7 V and current gain cutoff frequency (f_T) is 409 GHz. This excellent performance is attributed to the combination of the suppression of short-channel effect and the superior transport in 5 nm InAs-inserted-channel design concept. Higher f_T above 500 GHz is to be expected using the InAs-inserted-channel scheme, if reducing L_g down to sub-0.05μm range.