DocumentCode :
3372578
Title :
On-chip biased voltage-controlled oscillator with temperature compensation of the oscillation amplitude for robust I/Q generation
Author :
Ginés, A.J. ; Doldán, R. ; Barragán, M.J. ; Rueda, A. ; Peralìas, E.
Author_Institution :
Inst. de Microelectron. de Sevilla, Univ. of Seville, Seville, Spain
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
1979
Lastpage :
1982
Abstract :
In this work a CMOS 1.2V 5GHz low-power voltage-controlled oscillator (VCO) is proposed. It uses an on-chip biased LC-tank topology and introduces a temperature compensation technique which stabilizes the oscillation amplitude for a robust I/Q generation using a frequency divider-by-2. Compared to a standard design with constant bias, it reduces the oscillation variation by almost two orders of magnitude between 0°C and 100°C with negligible impact on the phase noise. Worst case estimations of the VCO phase noise after layout parasitic extraction are -110.1dBc/Hz and -126.6dBc/Hz at 1MHz and 5MHz offsets from the carrier, respectively. Its nominal current consumption is 198μA (plus 22.5μA for biasing) and it occupies 370×530μm2.
Keywords :
CMOS integrated circuits; circuit noise; circuit oscillations; compensation; frequency dividers; low-power electronics; network topology; phase noise; voltage-controlled oscillators; CMOS low-power voltage-controlled oscillator; current 198 muA; frequency 1 MHz; frequency 5 GHz; frequency 5 MHz; frequency divider; layout parasitic extraction; on-chip biased LC-tank topology; on-chip biased voltage-controlled oscillator; oscillation amplitude; oscillation variation; phase noise; robust I/Q generation; temperature 0 C to 100 C; temperature compensation; voltage 1.2 V; Costs; Energy consumption; Frequency conversion; Noise robustness; Phase noise; Radio frequency; Temperature; Topology; Voltage-controlled oscillators; ZigBee;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537050
Filename :
5537050
Link To Document :
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