Title :
CW operation at 1.34 μm of an InGaSb quantum-dot vertical-cavity surface-emitting laser (VCSEL) on GaAs substrate
Author :
Yamamoto, Naokatsu ; Akahane, Kouichi ; Gozu, Shin-ichiro ; Ohtani, Naoki
Author_Institution :
Basic & Adv. Res. Dept., Nat. Inst. of Inf. & Commun. Technol. (NICT), Tokyo, Japan
fDate :
31 May-4 June 2004
Abstract :
A vertical-cavity surface-emitting laser containing InGaSb quantum dots in the active region was fabricated on GaAs substrates. We observed the long-wavelength emitting at 1.34μm in cw operation at room temperature.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical fabrication; quantum dot lasers; surface emitting lasers; 1.34 mum; GaAs; InGaSb; VCSEL; quantum-dot vertical-cavity surface-emitting laser; Atomic force microscopy; Atomic layer deposition; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Quantum dots; Scanning electron microscopy; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442785
