Title :
L-simulator: a magPEEC-based new CAD tool for simulating magnetic-enhanced IC inductors of 3D arbitrary geometry
Author :
Long, Haibo ; Feng, Zhenghe ; Feng, Haigang ; Wang, Albert ; Ren, Tianling
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
This work presents a new PEEC-based inductor simulation tool, entitled L-simulator, which employs a magPEEC modeling algorithm and an existing FastCap modeling algorithm to address both magnetic and electrical coupling effects respectively, hence being capable to simulate 3D magnetic-enhanced RF IC inductors of arbitrary geometries. Applications on micromachined inductors in 0.2μm GaAs HEMT process and magnetic-cored micro inductors in 0.18μm CMOS technology are discussed.
Keywords :
CMOS integrated circuits; HEMT integrated circuits; III-V semiconductors; circuit CAD; equivalent circuits; gallium arsenide; inductors; semiconductor device models; 0.18 micron; 0.2 micron; 3D arbitrary geometry; CAD tool; CMOS technology; FastCap modeling algorithm; GaAs; HEMT process; L-simulator; PEEC-based inductor simulation tool; RF IC inductors; electrical coupling effects; magPEEC modeling algorithm; magnetic coupling effects; magnetic-cored microinductors; magnetic-enhanced IC inductor simulation; micromachined inductors; CMOS technology; Couplings; Gallium arsenide; Geometry; Inductors; Integrated circuit modeling; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Solid modeling;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1329505
