Title :
The bi-directional switching device without p-n junctions
Author :
Ueno, K. ; Konishi, Y. ; Fujisawa, N. ; Sakai, K. ; Ryoukai, Y. ; Seki, Y.
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan
Abstract :
In this paper, we show bi-directional switching by devices without any p-n junctions, using the ACCUFET (accumulation mode FET) structure. The device size used for the demonstration of switching behaviour was 4×4 mm2. The device blocks the voltage via the deep depletion region until holes accumulate at the SiO2-silicon interface to shrink the depletion region. The obtained on-resistance and forward blocking voltage were around 6.4 mΩ-cm2, and 50 V, respectively. Bi-directional switching at 100 kHz was demonstrated by a single chip for the first time
Keywords :
accumulation layers; electric resistance; interface states; power MOSFET; power semiconductor switches; semiconductor device testing; 100 kHz; 4 mm; 50 V; ACCUFET structure; Si; SiO2-Si; SiO2-silicon interface; accumulation mode FET structure; bi-directional switching; bi-directional switching device; deep depletion region; depletion region shrinkage; device size; forward blocking voltage; hole accumulation; on-resistance; p-n junctions; single chip bi-directional switching; switching behaviour; voltage blocking; Annealing; Bidirectional control; Cities and towns; Electrons; Fabrication; Oxidation; P-n junctions; Production facilities; Research and development; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702699
