DocumentCode
3372664
Title
Design and operation of uncooled 10 Gb/s, 1310 nm electroabsorption modulated lasers
Author
Gorkhale, M.R. ; Studenkov, Pavel V. ; Ueng-McHale, John ; Thomson, John ; Yogeeswaran, Karthik. ; Yao, Jie ; Van Saders, J.
Author_Institution
ASIP Inc., Somerset, NJ, USA
fYear
2004
fDate
31 May-4 June 2004
Firstpage
569
Lastpage
572
Abstract
We describe the design and operation of a 10 Gb/s, 1310 nm wavelength, electroabsorption modulated laser (EML) working uncooled between 0-85 °C. The limiting nature of the EA modulator transfer curve simplifies RF drive environment, reduces RF testing and enables excellent RF performance in low-cost TO-can based packages. The performance advantage of the EML for 1310 nm short reach links is demonstrated at the die level with SONET eye-margins >20% and extinction ratios >9 dB. We also report for the first time a high performance, SONET compliant TO-can based TOSA using an uncooled EML.
Keywords
SONET; distributed feedback lasers; electro-optical modulation; integrated optics; integrated optoelectronics; optical communication equipment; optical fabrication; optical fibre networks; 0 to 85 degC; 10 Gbit/s; 1310 nm; RF testing; SONET eye-margins; TO-can based TOSA; electroabsorption modulated lasers; Distributed feedback devices; Optical design; Optical modulation; Optical waveguides; Quantum well lasers; Radio frequency; Robustness; SONET; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442789
Filename
1442789
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