1/f Noise measurement and its doping dependencies of Si Hall sensors

In this paper, silicon Hall sensors with different sizes and doping levels are fabricated. Based on Hall cross prototypes, dependencies of device sensitivity, 1/f noise on doping are investigated. It is found that sensitivity is inversely proportional to areal concentration (n), and 1/f noise is proportional to n^-3/2. By trading off the performances, a reasonable higher doping is proved to be preferred. In our research, ANSYS is used to calculate the number of squares of the Hall cross resistor between force terminals. The Hooge constant (α) are extracted by two different methods, they are found to be reduced at higher doping level.