Title :
40 Gb/s InP-based Mach-Zehnder modulator with a driving voltage of 3 Vpp
Author :
Akiyama, S. ; Hirose, S. ; Itoh, H. ; Takeuchi, T. ; Watanabe, T. ; Sekiguchi, S. ; Kuramata, A. ; Yamamoto, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
31 May-4 June 2004
Abstract :
A 40 Gb/s InP-based Mach-Zehnder modulator has been developed that has capacitively loaded traveling-wave electrodes and operates in a simple push-pull configuration. It uses pin phase modulators to concentrate the electrical field at the core of the waveguide and thereby reduce the driving voltage. A semi-insulating upper cladding layer is used in the region of the passive optical waveguides to reduce the electrical loss caused by the p-doped cladding layer and thus increase the modulation bandwidth. A fabricated modulator had a bandwidth of 28 GHz and showed a clear eye opening at 40 Gb/s in a push-pull configuration using one electrical driver with a low driving voltage (3.0 Vpp ).
Keywords :
III-V semiconductors; claddings; electro-optical modulation; indium compounds; losses; optical communication equipment; optical fabrication; optical waveguides; phase modulation; 28 GHz; 3 V; 40 Gbit/s; InP; Mach-Zehnder modulator; electrical loss; passive optical waveguides; pin phase modulators; semiinsulating upper cladding layer; traveling-wave electrodes; Bandwidth; Electrodes; High speed optical techniques; Laboratories; Low voltage; Optical losses; Optical modulation; Optical waveguides; Phase modulation; Propagation losses;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442792
