DocumentCode
3372739
Title
40 Gb/s InP-based Mach-Zehnder modulator with a driving voltage of 3 Vpp
Author
Akiyama, S. ; Hirose, S. ; Itoh, H. ; Takeuchi, T. ; Watanabe, T. ; Sekiguchi, S. ; Kuramata, A. ; Yamamoto, T.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2004
fDate
31 May-4 June 2004
Firstpage
581
Lastpage
584
Abstract
A 40 Gb/s InP-based Mach-Zehnder modulator has been developed that has capacitively loaded traveling-wave electrodes and operates in a simple push-pull configuration. It uses pin phase modulators to concentrate the electrical field at the core of the waveguide and thereby reduce the driving voltage. A semi-insulating upper cladding layer is used in the region of the passive optical waveguides to reduce the electrical loss caused by the p-doped cladding layer and thus increase the modulation bandwidth. A fabricated modulator had a bandwidth of 28 GHz and showed a clear eye opening at 40 Gb/s in a push-pull configuration using one electrical driver with a low driving voltage (3.0 Vpp ).
Keywords
III-V semiconductors; claddings; electro-optical modulation; indium compounds; losses; optical communication equipment; optical fabrication; optical waveguides; phase modulation; 28 GHz; 3 V; 40 Gbit/s; InP; Mach-Zehnder modulator; electrical loss; passive optical waveguides; pin phase modulators; semiinsulating upper cladding layer; traveling-wave electrodes; Bandwidth; Electrodes; High speed optical techniques; Laboratories; Low voltage; Optical losses; Optical modulation; Optical waveguides; Phase modulation; Propagation losses;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442792
Filename
1442792
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