Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs

A thorough analysis of charge-pumping extraction techniques for hot-carrier induced defect spatial distribution in MOSFETs has been carried out. We discuss the main features of the existing approaches reflecting upon their shortcomings and applicability limits. For our investigations a new simple and accurate compact model for the MOSFET local oxide capacitance has been employed. The spatial distribution extracted from experiment is in a good agreement with the findings of our physics-based model of hot-carrier degradation.