DocumentCode :
3372778
Title :
Effect of microwave electromagnetic interference on CMOS RS latches
Author :
Chen, Jie
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear :
2011
fDate :
1-3 Nov. 2011
Firstpage :
359
Lastpage :
362
Abstract :
Microwave electromagnetic interference is a big challenge to electronic systems nowadays. Latch is a fundamental building block of digital electronic systems used in computers, communications, and many other types of systems. In this paper, we use numerical method to study the effect of microwave electromagnetic interference on CMOS RS latches, from the amplitude of microwave electromagnetic interference. Simulation results show that microwave electromagnetic interference might change the output state of CMOS RS latches with increasing amplitude. Meanwhile, these two kinds of latches used in the simulation have different susceptibility to microwave electromagnetic interference due to different structure.
Keywords :
CMOS integrated circuits; flip-flops; interference; magnetic susceptibility; microwave circuits; CMOS RS latches; digital electronic systems; fundamental building block; microwave electromagnetic interference; numerical method; susceptibility; CMOS integrated circuits; Electromagnetic interference; Latches; MOS devices; Microwave circuits; Microwave devices; CMOS RS latches; amplitude; microwave electromagnetic interference; susceptibility;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8265-8
Type :
conf
DOI :
10.1109/MAPE.2011.6156270
Filename :
6156270
Link To Document :
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