Title :
A 3kV/1.5A/2kHz Compact Modulator for Nitrogen Ion Plasma Implantation
Author :
Rossi, J.O. ; Ueda, M. ; Barroso, J.J.
Author_Institution :
Space Res. Nat. Inst., Sao Jose dos Campos
Abstract :
To treat stainless steel surfaces by nitrogen plasma implantation we devised a solid-state compact modulator, in which a 8.0 muF capacitor discharges through a forward converter composed of a low blocking voltage IGBT switch (1.0 kV) and three step-up pulse transformers, rather than employing hard-tube devices such as in conventional plasma ion implantation pulsers, which are expensive and cumbersome. For this, by using a high- voltage resistive load of 2 kOmega and a low power DC charger of only 300 V/0.2 A we built a prototype to provide pulses of 3 kV/5 mus with rise time of about 1.0 mus at a repetition rate of 2 kHz.
Keywords :
capacitors; convertors; modulators; plasma immersion ion implantation; power semiconductor switches; pulse transformers; IGBT switch; capacitor; current 1.5 A; forward converter; frequency 2 kHz; nitrogen ion plasma implantation; solid-state compact modulator; step-up pulse transformers; time 1.0 mus; voltage 1.0 kV; voltage 3 kV; Nitrogen; Plasma devices; Plasma immersion ion implantation; Pulse modulation; Pulse transformers; Solid state circuits; Steel; Surface discharges; Surface treatment; Switches;
Conference_Titel :
Pulsed Power Conference, 2005 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-9189-6
Electronic_ISBN :
0-7803-9190-x
DOI :
10.1109/PPC.2005.300480