Title :
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm
Author :
Pierobon, R. ; Rampazzo, E. ; Clonfero, F. ; De Pellegrin, T. ; Bertazzo, M. ; Meneghesso, Gauss ; Zanoni, E. ; Suemitsu, T. ; Enoki, T.
Author_Institution :
Dept. of Inf. Eng., Padova Univ., Italy
fDate :
31 May-4 June 2004
Abstract :
In this paper we present the correlation between the impact ionization gate current with the S22 scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y22 at low frequencies.
Keywords :
III-V semiconductors; aluminium compounds; electric admittance; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device breakdown; 50 MHz to 6 GHz; HEMT; InAlAs-InGaAs-InP; admittance; breakdown dynamics; impact ionization gate current; scattering parameter; Current measurement; Electric breakdown; Frequency; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Scattering parameters;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442802
