In-Situ Isotropic and Anisotropic DRIE Sequence for Massive Parallel Multistage Brownian Ratchets

Author

Pham, Hoa T M ; Wei, Jia ; De Boer, Charles R. ; Sarro, Pasqualina M.

Author_Institution

Delft Univ. of Technol., Delft

fYear

2007

fDate

10-14 June 2007

Firstpage

497

Lastpage

500

Abstract

In this paper an in-situ isotropic and anisotropic deep reactive ion etching (DRIE) sequence process is presented to obtain a periodic asymmetric variation along the z-axis in pore diameter on silicon wafers, which can act as massively parallel and multiply stacked Brownian ratchets. The etch rates of isotropic and anisotropic etching process depends strongly on the size and the shape of structures. The undercut phenomenon for small size structure (less than 2 mum) is investigated. Exposure into NH₃ plasma after etching to smoothen the surface of silicon is discussed as well.

Keywords

micromechanical devices; separation; silicon; sputter etching; MEMS fabrication; anisotropic DRIE sequence; deep reactive ion etching; in-situ isotropic etching; massive parallel multistage Brownian ratchets; particle separation; plasma etching; silicon wafers; Anisotropic magnetoresistance; Biomembranes; Etching; Hafnium; Passivation; Plasma applications; Plasma chemistry; Plasma temperature; Shape; Silicon; Brownian ratchet; DRIE; anisotropic etching; drift ratchet; isotropic etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300176

Filename

4300176