Title :
Semiconductor microwave device in HSRI of China
Author_Institution :
Hebei Semicond. Res. Inst., China
Abstract :
The paper introduces some progress on semiconductor microwave devices in the Hebei Semiconductor Research Institute (HSRI) of China. The scope of this paper includes silicon power transistors, A3B5 materials and devices, InP crystals, GaAs and InP based heterostructure epi-wafers, power microwave transistors and MMICs as well as various 8 mm monolithic ICs
Keywords :
III-V semiconductors; MIMIC; MMIC; microwave devices; semiconductor devices; 8 mm; China; GaAs; GaAs based heterostructure epi-wafers; HSRI; Hebei Semiconductor Research Institute; InP; InP based heterostructure epi-wafers; InP crystals; MM-wave monolithic ICs; MMICs; Si; Si power transistor; power microwave transistors; semiconductor microwave devices; Crystalline materials; Crystals; Gallium arsenide; Indium phosphide; MMICs; Microwave devices; Microwave transistors; Power transistors; Semiconductor materials; Silicon;
Conference_Titel :
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Conference_Location :
Kharkov
Print_ISBN :
0-7803-5553-9
DOI :
10.1109/MSMW.1998.758932
