Title :
Nitridized InAs/GaAs self-assembled quantum dots for optical communication wavelength
Author :
Kita, T. ; Masuda, Y. ; Seki, H. ; Mori, T. ; Wada, O.
Author_Institution :
Fac. of Eng., Kobe Univ., Japan
fDate :
31 May-4 June 2004
Abstract :
A technique to grow InAs quantum dot (QD) to extend the emission wavelength into optical communication range has been developed. We performed nitridation after growing InAs QDs by molecular-beam epitaxy. The nitridized InAs QDs show a remarkable red shift of the photoluminescence peak. We have confirmed a 1.3μm emission peak at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; nitridation; photoluminescence; red shift; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; 1.3 mum; InAs-GaAs; molecular-beam epitaxy; nitridation; optical communication wavelength; photoluminescence; red shift; self-assembled quantum dots; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical fiber communication; Photoluminescence; Quantum dot lasers; Quantum dots; Radio frequency; Semiconductor lasers; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442806
