Dynamic and noise parameters of the power adders using the multistructural IMPATT diodes

The development of modern microwave semiconductor electronics in a direction of increased power level of the generated oscillations results in the necessity of using power addition (combining) circuits for common resonator multistructural IMPATT diodes (MSID). Specific features of the impedance performances of MSIDs operating in the short-wave part of the centimetric range are the presence of a parallel type resonance near to the upper limit of the working range of frequencies, high values of the resonance resistance (thousands of Ohms) and Q-factor (tens units) of the MSID oscillatory system, formed by the reactive elements of the diode package. In this paper, the authors discuss four variants of two-diode oscillator configuration which use different power combining techniques