Title :
Thesis´s About Gunn Diode Work With Two Transit-time Regions And Heterojunction Between Them
Keywords :
Cathodes; Frequency; Gallium arsenide; Gunn devices; Heterojunctions; Power generation; Semiconductor diodes; Semiconductor process modeling; Temperature; Voltage;
Conference_Titel :
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Print_ISBN :
0-7803-5553-9
DOI :
10.1109/MSMW.1998.758935
